STGB10NC60KD
Features
- Lower on voltage drop (VCE(sat))
- Lower CRES / CIES ratio (no cross-conduction susceptibility)
- Very soft ultra fast recovery antiparallel diode
- Short-circuit withstand time 10µs
Description
This IGBT utilizes the advanced Power MESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior.
Applications
- High frequency motor controls
- SMPS and PFC in both hard switch and resonant topologies
- Motor drives
3 1
D2PAK
3 1
DPAK
3 2 1
TO-220FP
3 2 1
TO-220
Figure 1. Internal schematic diagram
Table 1. Device summary
Order codes
Marking
STGB10NC60KDT4
GB10NC60KD
STGD10NC60KDT4
GD10NC60KD
STGF10NC60KD
GF10NC60KD
STGP10NC60KD
GP10NC60KD
Packages D2PAK DPAK
TO-220FP TO-220
November 2009
Doc ID 11423 Rev 6
Packaging Tape and...